Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
作者
Jan Blochwitz,Martin Pfeiffer,Torsten Fritz,Karl Leo
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1998-08-10卷期号:73 (6): 729-731被引量:515
标识
DOI:10.1063/1.121982
摘要
We show that doping of the transport layers can strikingly improve the properties of organic light emitting diodes (OLEDs). The electroluminescence onset voltage of diodes containing an vanadyl–phthalocyanine (VOPc) hole transport layer intentionally doped with tetrafluorotetracyano-quinodimethan (F4-TCNQ) is reduced by up to an order of magnitude compared to OLED with undoped VOPc. The improved properties of our devices can be explained by the improved conductivity and better injection for a doped transport layer.