Sb2S3/Spiro-OMeTAD Inorganic–Organic Hybrid p–n Junction Diode for High Performance Self-Powered Photodetector

Organic-inorganic hybrid diodes are very promising for solution processing, low cost, high performance optoelectronic devices. Here, we report a high quality p-n heterojunction diode composed of n-type inorganic Sb2S3 and p-type organic 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) with a rectification ratio of ∼102 at an applied bias of 1 V. On illumination with visible light (470 nm, 1.82 mW/cm2), the current value in our device becomes 8 × 102 times that of its dark value even at a zero bias condition. The estimated responsivity value at zero bias is 0.087 A/W which is so far the highest reported for any organic-inorganic hybrid photodiode, to the best of our knowledge. It also exhibits a fast photoresponse time of <25 ms (instrumental limit). More importantly, our device can also detect visible light with power density as low as 8 μW/cm2 with a photocurrent density of 1.2 μA/cm2 and a photocurrent to dark current ratio of more than 8. We also demonstrate that the values of responsivity, short circuit current, and open circuit voltage of the photodetector can be improved significantly using a thin layer of TiO2 hole-blocking layer. These findings suggest Sb2S3/spiro-OMeTAD heterojuncton as a promising candidate for efficient self-powered low visible light photodetector.