Advanced concepts in Ga2O3 power and RF devices

The extremely high critical electric field of Ga2O3 makes it an attractive material for power electronics and RF devices that demands high power output. However, reaching the critical electric field in Ga2O3 devices is not a trivial task, especially when native p-type doping is not available. In this chapter, we quantitatively outlined the design challenges through the calculation of practical maximum electric fields in Schottky junction and MOS structures, the two viable alternative voltage-blocking structures in Ga2O3. For effective electric-field management, we proposed two advanced device concepts: the use of high barrier height Schottky junctions and the incorporation of RESURF via trench structures. Both concepts have been verified experimentally and would greatly benefit the release of Ga2O3’s true potential.