材料科学
光电子学
量子阱
激光器
半导体激光器理论
硅
光致发光
自发辐射
激光阈值
载流子寿命
半导体
作者
Christopher R. Fitch,Graham William Read,Igor P. Marko,Dominic A. Duffy,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Stephen J. Sweeney
出处
期刊:Le Centre pour la Communication Scientifique Directe - HAL - Université de Nantes
日期:2021-06-21
标识
DOI:10.1109/cleo/europe-eqec52157.2021.9542471
摘要
Epitaxially grown III-V semiconductor lasers on silicon substrates are key to the development of low-cost silicon photonic circuits. Antimony based Composite Quantum Well (CQW) devices on silicon, which overcome lattice constant and thermal mismatch differences, have been successfully demonstrated in the important 1.55 m long-haul telecoms wavelength region [1] . However, further development is required to address high threshold current densities and temperature sensitivity. To improve these on-silicon devices we investigate and report on the efficiency limiting mechanisms of the equivalent active regions grown on GaSb. The devices investigated here consist of compressively strained Ga 0.8 In 0.2 Sb QWs with Al 0.35 Ga 0.65 As 0.03 Sb 0.97 barriers and Al 0.9 Ga 0.1 As 0.07 Sb 0.93 cladding layers lattice matched to a GaSb substrate [2] . In this paper we report on the temperature and high hydrostatic pressure dependent investigation of these devices. We identify details of the principal efficiency limiting mechanisms and sources of temperature sensitivity and provide specific recommendations for design improvement.
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