A Unified Platform for Junction Temperature Estimation and Condition Monitoring of Power Semiconductor Devices

This paper presents a combined method for Junction Temperature Estimation and Condition Monitoring. It calculates a continuous temperature estimate, combined with tracking of electrical and thermal characteristics for Condition Monitoring. Experimental data across a range of mission profiles is used to demonstrate its effectiveness in distinguishing between degradation and a mission profile change, detecting physical changes and abnormal operation, and detecting end-of-life in a degraded device.