Defect-related photoluminescence from ammono GaN

Photoluminescence (PL) from GaN substrates fabricated by the ammonothermal growth method was studied in a wide range of temperatures and excitation intensities, both with steady-state and time-resolved PL techniques. Three defect-related PL bands were detected: the ultraviolet luminescence band with the zero-phonon line at 3.27 eV, the Zn-related BL1 band with a maximum at 2.9 eV, and the yellow luminescence band (labeled YL2) with a maximum at 2.3 eV. The YL2 band belongs to an unknown defect and is different from the CN-related YL1 band. Its maximum blueshifts by 0.06 eV with increasing excitation intensity and redshifts by more than 0.1 eV with a time delay after a laser pulse. The YL2 band is preliminarily attributed to a defect complex containing the gallium vacancy.