Graphene as current spreading layer on AlGaInP light emitting diodes

Due to high transmittance and high mobility, graphene is one of the promising candidates for a current spreading layer, which is crucial to light emitting diode (LED) performance. In this paper, improved AlGaInP LED performance was reported after graphene was applied on the GaP surface. Due to its lowered work function difference than with the GaN material, the electrical properties remain the same without additional voltage bias. The light output power is enhanced by about 40% under the current injection of 5 mA at room temperature, which was confirmed by the light emission profile analysis in this study. Such results indicate that raphene is a promising candidate as a current spreading layer under low current injection.