Piezotronic effect in 1D van der Waals solid of elemental tellurium nanobelt for smart adaptive electronics

范德瓦尔斯力 半导体 纳米材料 纳米技术 材料科学 数码产品 压电 载流子 异质结 肖特基势垒 光电子学 化学 二极管 物理化学 复合材料 有机化学 冶金 分子
作者
Shengjie Gao,Yixiu Wang,Ruoxing Wang,Wenzhuo Wu
出处
期刊:Semiconductor Science and Technology [IOP Publishing]
卷期号:32 (10): 104004-104004 被引量:41
标识
DOI:10.1088/1361-6641/aa8605
摘要

Emerging technologies in wearable systems demand that functional devices can adaptively interact with the human body, where mechanical stimuli are ubiquitous and abundant. However, the electrical manipulation of charge carriers underpins the operations of state-of-the-art devices, and the effective control of interfacial energetics for charge carriers by the dynamic mechanical stimuli is still a relatively unexplored degree of freedom for semiconductor nanodevices. Piezotronic effect in nanostructured piezoelectric semiconductors offers exciting opportunities in addressing the above challenges. Here we report the first experimental exploration of piezotronic effect in 1D van der Waals solid of p-type tellurium nanobelt and systematically investigate the strain-gated charge carriers transport properties. The strain-induced polarization charges at the surfaces of Te nanobelt can modulate the electronic transport through the interfacial effect on the Schottky contacts and the volumetric effect on the conducting channel. The competing phenomenon between interfacial and volumetric effects has been studied for the first time in piezotronics. Our research allows the access to a broad range of characterization and application of Te nanomaterials for piezotronics and could guide the future study of piezotronic effect in other materials. This progress in piezotronics, together with emerging methods for deterministic production and assembly of nanomaterials, leads to compelling opportunities for research from basic studies of piezoelectricity and semiconductor properties in functional nanomaterials to the development of 'smarter' electronics and optoelectronics.

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