肖特基二极管
材料科学
光电子学
肖特基势垒
二极管
分析化学(期刊)
物理
化学
色谱法
作者
Qi-Ming He,Weibing Hao,Xuanze Zhou,Yu You Li,Kai Zhou,Chen Chen,Wenhao Xiong,Guangzhong Jian,Guangwei Xu,Xiaolong Zhao,Xiaojun Wu,Junfa Zhu,Shibing Long
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2021-01-01
卷期号:43 (2): 264-267
被引量:19
标识
DOI:10.1109/led.2021.3133866
摘要
This work demonstrates vertical $\boldsymbol {\beta } $ -Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm2 without edge termination. The unreliable surface on the top of $\sim {1.2}\times {10} ^{{16}}$ cm−3 drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/ $\boldsymbol {\beta } $ -Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of $\boldsymbol {\beta }$ -Ga2O3 devices and verify the potential of $\boldsymbol {\beta }$ -Ga2O3 SBDs for power applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI