The principle and simple design applications of blue LED

InGaN/GaN blue light-emitting diode (blue LED) is the most commonly investigated and applied LED for blue laser, optical memory, general luminescence, and the candidate for clean energy. However, limited by the efficiency droop, the luminous properties of InGaN/GaN blue LED still faces plenty of challenges. This paper aims to investigate the principle of strains on internal quantum efficiency of InGaN/GaN blue LED, as well as provide simple materials and structure design for high luminous efficiency and harmless blue LED based on the composite of InGaN/GaN. On this basis, the properties are simulated and testified based on the program TracePro Application. By tuning up the supper lattice on m-plane instead of c-plane, the polarization electric field will be eliminated and thus the efficiency droop will be improved. Besides, a backlight structure of the combination of cyan and hyacinthine LED chips is launched by grating ZnSeTe quantum dots and ZnSe quantum dots on the surface of p-GaN and this backlight structure design is proved to be high luminous and harmless to human eyes. These results shed light on possible ways to enhance the luminous properties and safety of InGaN/GaN blue LED both in materials aspect and in structure design.