材料科学
纳米电子学
纳米尺度
纳米技术
石墨烯
表征(材料科学)
原子力显微镜
导电体
异质结
导电原子力显微镜
光电子学
工程物理
复合材料
工程类
作者
Filippo Giannazzo,Giuseppe Greco,Fabrizio Roccaforte,Chandreswar Mahata,Mario Lanza
出处
期刊:Nanoscience and Technology
日期:2019-01-01
卷期号:: 303-350
被引量:9
标识
DOI:10.1007/978-3-030-15612-1_10
摘要
Two-dimensional materials (2DM), such as the semimetal graphene, semiconducting MoS2 and insulating h-BN, are currently the object of wide interests for next generation electronic applications. Despite recent progresses in large area synthesis of 2DMs, their electronic properties are still affected by nano- or micro-scale defects/inhomogeneities related to the specific growth process. Electrical scanning probe methods, such as conductive atomic force microscopy (C-AFM), are essential tools to investigate charge transport phenomena in 2DMs with nanoscale resolution. This chapter illustrates some case studies of C-AFM applications to graphene, MoS2 and h-BN. Furthermore, the results of the nanoscale electrical characterization have been correlated to the behavior of macroscopic devices fabricated on these materials.
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