Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/ SnX2 ( X =

Custom-made stacks of two-dimensional materials can be constructed to achieve specific optoelectronic properties in devices. This work uses density functional theory to investigate the electronic structures and transport properties of phosphorene--tin-dichalcogenide van der Waals heterostructures in an external electric field. The results show that these systems exhibit rare type-III (broken-gap) band alignment, which will facilitate the development of tunnel field-effect transistors. Moreover, the band alignment can be tuned effectively by the applied electric field.