铁电性
材料科学
正交晶系
压电响应力显微镜
极地的
相(物质)
凝聚态物理
中子衍射
结晶学
电介质
纳米技术
化学物理
光电子学
晶体结构
化学
物理
有机化学
天文
作者
Xianghan Xu,Fei Huang,Yubo Qi,Sobhit Singh,Karin M. Rabe,Dimuthu Obeysekera,Junjie Yang,Ming Chu,Sang‐Wook Cheong
出处
期刊:Nature Materials
[Springer Nature]
日期:2021-01-25
卷期号:20 (6): 826-832
被引量:113
标识
DOI:10.1038/s41563-020-00897-x
摘要
HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has thought not attainable in bulk crystals. Though, perplexities remain primarily due to the polymorphic nature and the characterization challenges at small-length scales. Herein, utilizing a state-of-the-art Laser-Diode-heated Floating Zone technique, we report ferroelectricity in bulk single-crystalline HfO2:Y as well as the presence of anti-polar Pbca phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti-)polar crystallographic signatures and abundant 90o/180o ferroelectric domains in addition to the switchable polarization with little wake-up effects. Density-functional theory calculations suggest that the Yttrium doping and rapid cooling are the key factors for the desired phase. Our observations provide new insights into the polymorphic nature and phase controlling of HfO2, remove the upper size limit for ferroelectricity, and also pave a new road toward the next-generation ferroelectric devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI