光电导性
硅烷
氮化硅
材料科学
无定形固体
分析化学(期刊)
氮气
辉光放电
非晶硅
大气温度范围
稳态(化学)
硅
化学
光电子学
晶体硅
等离子体
复合材料
结晶学
物理化学
有机化学
气象学
物理
量子力学
色谱法
作者
İlker Ay,Hüseyin Tolunay
标识
DOI:10.1016/j.solmat.2003.06.005
摘要
Amorphous SiNx:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiNx:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiNx:H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature.
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