Development of new Si-contained hardmask for tri-layer process

In the advanced semiconductor lithography process, the tri-layer process have been used for the essential technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process. Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with different photoresist.