发光二极管
光电子学
材料科学
外延
宽禁带半导体
量子效率
光学
二极管
光致发光
氮化物
异质结
纳米技术
物理
图层(电子)
作者
V. Kueller,Arne Knauer,Christian Reich,Anna Mogilatenko,Markus Weyers,Joachim Stellmach,Tim Wernicke,Michael Kneissl,Zhihong Yang,Christopher L. Chua,N. M. Johnson
出处
期刊:IEEE Photonics Technology Letters
[Institute of Electrical and Electronics Engineers]
日期:2012-08-08
卷期号:24 (18): 1603-1605
被引量:48
标识
DOI:10.1109/lpt.2012.2210542
摘要
A reduction of the threading dislocation density in AlN layers on a sapphire from 1010 cm-2 to 109 cm-2 was achieved by applying epitaxial lateral overgrowth (ELO) of patterned AlN and sapphire templates. By varying the growth temperature, it is possible to influence the lateral growth rate and modulate the thickness before coalescence. With a two-step growth at two different temperatures, up to 11-μm thick crackfree layers were achieved. Using these ELO AlN templates, the light emitting diode (LED) output power was >;1 mW dc at 295 nm and ~ 4mW at 324 nm which is a significant increase compared to planar templates. The usefulness of modulated ELO AlN templates for ultraviolet LEDs has thus been validated.
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