Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulatormetal (MIM) capacitors using Al₂O₃-HfO₂-Al₂O₃ and SiO₂-HfO₂-SiO₂ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.