专用集成电路
放大器
阶段(地层学)
电阻抗
材料科学
电气工程
物理
计算机科学
光电子学
工程类
计算机硬件
CMOS芯片
生物
古生物学
作者
Christopher Chock,K. Flood,L. Macchiarulo,F. Martinez-Mckinney,A. Martinez-Rojas,S. M. Mazza,Isar Mostafanezhad,M. Nizam,J. Ott,R. Perron,E. Ryan,H. F-W. Sadrozinski,B. A. Schumm,A. Seiden,K. Shin,M. Tarka,Dean Uehara,M. Wilder,Y. Zhao
标识
DOI:10.1088/1748-0221/18/02/c02016
摘要
Abstract We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 μm thick AC-LGAD. The evaluation of the analog front end with β-particles impinging on 3 × 3 AC-LGAD arrays (500 μm pitch, 200 × 200 μm 2 metal) confirms a fast output rise time of 600 ps and good timing performance with a jitter of 45 ps. Further calibration experiments and TCT laser studies indicate some gain limitations that are being investigated and are driving the design of the second-generation pre-amplification stages to reach a jitter of 15 ps.
科研通智能强力驱动
Strongly Powered by AbleSci AI