Low-voltage Injection-free Electroluminescence Device based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe 2 /WSe 2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.