材料科学
光电子学
红外线的
范德瓦尔斯力
异质结
二硫化钼
光电流
光学
化学
物理
冶金
有机化学
分子
作者
Shukui Zhang,Xinning Huang,Yan Chen,Ruotong Yin,Hailu Wang,Tengfei Xu,Jiaoyang Guo,Xingjun Wang,Tie Lin,Hong Shen,Jun Ge,Xiangjian Meng,Weida Hu,Ning Dai,Xudong Wang,Junhao Chu,Jianlu Wang
出处
期刊:PubMed
日期:2024-02-08
卷期号:: e2313134-e2313134
标识
DOI:10.1002/adma.202313134
摘要
The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 µm), with a blackbody detectivity of 2.7 × 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 µm. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection.
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