Synchronous Regulation of Hydrophobic Molecular Architecture and Interface Engineering for Robust WORM‐Type Memristor

Abstract In the context of human active response to exponentially increasing data volumes, memristors have emerged as a focal point in systematic problem‐solving approaches. Particularly, organic memristors, characterized by excellent scalability, flexibility, and 3D stacking capabilities, have shown its tremendous potential in innovative electronic applications. However, the modulation of molecular assembly and interface interaction at the electrode surface poses a challenging task, despite their crucial role in determining the memristive performance. Herein, a collaborative method involving hydrophobic molecular design and interface engineering is proposed to generate high‐quality nanofilms with optimal photoelectric and electrochemical properties. By subjecting the bottom electrode to O 2 plasma treatment and chemical modification using a hydrophobic ionic liquid poly(diallyldimethylammonium) bis(trifluoromethanesulfonyl)imide (PTFSI), the hydrophobic compound DN demonstrates exceptional affinity and stronger intermolecular interactions with the electrode surface. Consequently, the two‐terminal device array comprising Al/DN@PTFSI/ITO exhibits robust non‐volatile write‐once‐read‐many times (WORM) memory behavior, resulting in a tripling production yield from 30% to 92% along with a lower threshold voltage of 1.5 V, higher ON/OFF current ratio of 10 3 and excellent stability. This study presents a versatile approach to optimize the film assembly and material/electrode interface, thereby accelerating the development of organic memristors toward future applications.