塞曼效应
凝聚态物理
反铁磁性
自旋电子学
磁化
物理
电场
磁性半导体
自旋(空气动力学)
半导体
极化密度
塞曼能源
自旋极化
磁场
铁磁性
量子力学
电子
热力学
作者
Hong Jian Zhao,Xinran Liu,Yanchao Wang,Yurong Yang,L. Bellaïche,Yanming Ma
标识
DOI:10.1103/physrevlett.129.187602
摘要
Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splitting of electronic energy levels---termed as the spin Zeeman effect---which is controlled by an electric field. By symmetry analysis, we identify 21 centrosymmetric magnetic point groups that accommodate such a spin Zeeman effect. We further predict by first principles that two antiferromagnetic semiconductors, ${\mathrm{Fe}}_{2}{\mathrm{TeO}}_{6}$ and ${\mathrm{SrFe}}_{2}{\mathrm{S}}_{2}\mathrm{O}$, are excellent candidates showcasing Zeeman splittings as large as $\ensuremath{\sim}55$ and $\ensuremath{\sim}30\text{ }\text{ }\mathrm{meV}$, respectively, induced by an electric field of $6\text{ }\text{ }\mathrm{MV}/\mathrm{cm}$. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our Letter thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors.
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