反铁磁性
凝聚态物理
物理
霍尔效应
剩余电阻率
电阻率和电导率
磁电阻
各向异性
磁场
超导电性
量子力学
作者
Vinay Sharma,Rajeev Nepal,R. C. Budhani
出处
期刊:Physical review
[American Physical Society]
日期:2023-10-26
卷期号:108 (14)
被引量:2
标识
DOI:10.1103/physrevb.108.144435
摘要
Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electromagnetic responses including as a large anomalous Hall effect (AHE) and spin Hall conductivity. The ${\mathrm{Mn}}_{3}\mathrm{Sn}$ and ${\mathrm{Mn}}_{3}\mathrm{Ge}$ compounds, where the Mn spins arrange in a kagome lattice, are examples of this class of materials. Here, we report on measurements of magnetotransport in $c$-axis textured ${\mathrm{Mn}}_{3}\mathrm{Sn}$ thin films grown on the [111] plane of single-crystal MgO by dc magnetron sputtering. At room temperature, these films display a weak uncompensated magnetic moment of $\ensuremath{\approx}0.12\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{\mathrm{B}}/\mathrm{f}.\mathrm{u}.$ in the basal plane and a longitudinal resistivity (${\ensuremath{\rho}}_{xx}$) $\ensuremath{\approx}3.8\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\mathrm{m}$, which matches well with the bulk value. A residual resistivity ratio $[{\ensuremath{\rho}}_{xx}\phantom{\rule{0.16em}{0ex}}(300K)/{\ensuremath{\rho}}_{xx}\phantom{\rule{0.16em}{0ex}}(2\phantom{\rule{0.16em}{0ex}}K)]$ of $\ensuremath{\approx}3.92$ further indicates the high quality of the films. While at 300 K a weak AHE together with field-linear Hall resistivity (${\ensuremath{\rho}}_{xy}$) is observed in magnetic fields ($H$) applied perpendicular to the kagome planes, the temperature ($T$) dependence of ${\ensuremath{\rho}}_{xy}$ shows prominent signatures of three magnetic phases in the temperature regime of 2--300 K. The ${\ensuremath{\rho}}_{xy}$ also derives a nontrivial topological contribution (${\ensuremath{\rho}}_{\mathrm{THE}}\ensuremath{\sim}1\mathrm{n}\mathrm{\ensuremath{\Omega}}\mathrm{m}$) in the spin-glass phase which appears at $T\ensuremath{\le}100$ K. The origin of the ${\ensuremath{\rho}}_{\mathrm{THE}}$ is attributed to spin textures which may appear in a frustrated chiral spin order. Our measurements of anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) over a wide $H\ensuremath{-}T$ phase space reveal the hitherto unseen effects in the three magnetic phases of ${\mathrm{Mn}}_{3}\mathrm{Sn}$. While the AMR and PHE are negative in the inverse triangular spin phase ($250\phantom{\rule{0.16em}{0ex}}\mathrm{K}\ensuremath{\le}T\ensuremath{\le}{T}_{\mathrm{N}}$), the helical phase ($100\ensuremath{\le}T\ensuremath{\le}250\phantom{\rule{0.16em}{0ex}}\mathrm{K}$) is devoid of anisotropic in-plane resistivity, and the spin-glass phase shows a sign reversal of AMR with the increasing magnetic field. The origin of this sign change in AMR/PHE is attributed to the emergence of topologically protected spin textures like skyrmions where the fictitious effective magnetic field is estimated to be $\ensuremath{\approx}4.4$ Tesla.
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