硅
氩
化学
阳极
石墨
阴极
蒸发
电弧
托尔
等离子体
纳米线
纳米技术
分析化学(期刊)
电极
材料科学
有机化学
热力学
物理
物理化学
量子力学
作者
Б. А. Тимеркаев,E. A. Erlingayte,A. S. Galyamov,С. В. Дробышев,N. G. Andreeva
标识
DOI:10.1134/s0018143923070482
摘要
This work describes the process of synthesis of silicon nanotubes and nanowires in an argon arc. Evaporation of silicon atoms is carried out from crystalline silicon placed in the well of a graphite anode. The electrodes were placed in a plasma reactor in an upright position at an argon pressure of 450 Torr. During the discharge, silicon atoms evaporated from the anode surface. Deposits formed on the surface of the graphite cathode, which were silicon nanotubes and nanowires. The synthesized samples were analyzed on an electron microscope.
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