材料科学
退火(玻璃)
辐照
薄脆饼
中子
深能级瞬态光谱
肖特基二极管
中子温度
光电子学
分析化学(期刊)
外延
二极管
放射化学
核物理学
硅
化学
复合材料
物理
图层(电子)
色谱法
作者
Junesic Park,Byung-Gun Park,Gwang Min Sun
标识
DOI:10.1016/j.net.2022.09.011
摘要
The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4HSiC was investigated. Au/SiC Schottky diodes were manufactured using a 4HSiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 1017 and 2.7 × 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 °C). Capacity–voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4HSiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 °C annealing; the decrease was faster when the defect level was shallow.
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