螺旋钻
低能电子衍射
退火(玻璃)
俄歇电子能谱
硅化物
肖特基势垒
单层
带材弯曲
硅
电子衍射
材料科学
分析化学(期刊)
化学
结晶学
衍射
原子物理学
纳米技术
光电子学
光学
冶金
核物理学
物理
二极管
色谱法
作者
H. Balaska,R.C. Cinti,T.T.A. Nguyen,J. Derrien
出处
期刊:Surface Science
[Elsevier]
日期:1986-03-01
卷期号:168 (1-3): 225-233
被引量:21
标识
DOI:10.1016/0039-6028(86)90853-8
摘要
The behaviour of the Mo/Si(111) interface has been studied under atomically clean conditions using low-energy electron diffraction, UV photoemission and Auger spectroscopies. At room temperature, the Auger measurements indicate a layer-by-layer growth where no intermixing involving atomic motion across the interface occurs, in contrast with many transition-metal-silicon systems. The abrupt junction is confirmed by the UPS results which show a Mo adsorbed phase in the coverage range θ < 1 monolayer and a rapid recovering of the bulk Mo features for increasing θ. The band bending variation detected by the shift of the Si bulk structures on the UPS spectra shows that the Schottky barrier is formed before completion of the first Mo layer. These thin unreacted junctions are stable upon annealing up to 300°C. Above this temperature reactions take place and the MoSi2 silicide forms at ≈600°C.
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