钻石
化学气相沉积
半导体
材料科学
工程物理
光电子学
热的
纳米技术
半导体材料
领域(数学)
数码产品
复合材料
电气工程
物理
工程类
热力学
数学
纯数学
作者
Chris J.H. Wort,Richard Balmer
标识
DOI:10.1016/s1369-7021(07)70349-8
摘要
The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition (CVD) is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities1 of >3000 cm2V−1s−1 and thermal conductivities2 >2000 Wm−1K−1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm−1. These figures suggest that, providing a range of technical challenges can be overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required.
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