材料科学
光子学
聚焦离子束
光学
量子点
光电子学
电子束光刻
光子
氙气
制作
平版印刷术
光子晶体
离子
抵抗
纳米技术
物理
病理
原子物理学
医学
量子力学
替代医学
图层(电子)
作者
Maciej Jaworski,Paweł Mrowiński,Marek Burakowski,Paweł Holewa,Laura Zeidler,M. Syperek,Elizaveta Semenova,G. Sęk
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2024-09-19
卷期号:32 (23): 41089-41089
被引量:2
摘要
Electron beam lithography is a standard method for fabricating photonic micro and nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique is difficult for direct 3D control of the structure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D shaping of photonic structures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. The method is optimized to minimize the possible ion-beam-induced material degradation, which allows exploration of both non-deterministic and deterministic fabrication approaches, resulting in photonic structures naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QD membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain simulations show that the angled sidewalls significantly increase the emission collection efficiency to approx. 0.9 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (∼99%) and a superior extraction efficiency value reported in the C-band of η = 24 ± 4%.
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