Manufacture and applications of GaN-based piezotronic and piezo-phototronic devices

Abstract Driven by the urgent demands for information technology, energy, and intelligent industry, third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices. Fundamentally, piezoelectric polarization is the most essential feature of GaN materials. Incorporating piezotronics and piezo-phototronics, GaN materials synergize mechanical signals with electrical and optical signals, thereby achieving multi-field coupling that enhances device performance. Piezotronics regulates the carrier transport process in micro–nano devices, which has been proven to significantly improve the performance of devices (such as high electron mobility transistors and microLEDs) and brings many novel applications. This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics. Furthermore, it delves into the fabrication and integration processes of GaN devices to achieve state-of-the-art performance. Additionally, this review analyzes the impact of introducing three-dimensional stress and regulatory forces on the electrical and optical output performance of devices. Moreover, it discusses the burgeoning applications of GaN devices in neural sensing, optoelectronic output, and energy harvesting. The potential of piezotronic-controlled GaN devices provides valuable insights for future research and the development of multi-functional, diversified electronic devices.