Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructure

Abstract The progression of quantum phenomena aligns closely with the miniaturization of nano-semiconductor transistors. This necessitates innovative quantum structures beyond traditional transistor types. Investigating electrostatically defined nanoscale devices within two-dimensional (2D) semiconductor heterostructures, particularly van der Waals heterostructures offers advantages like large-scale uniformity and flexibility. Here, we focus on the charge transport of a MoS 2 /WSe 2 encapsulated heterostructure controlled by a split-gate configuration, revealing a distinctive step-like current profile at a low temperature of 77 K. The observed distinguishable regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the device is also investigated to understand the role of thermal effects on the observed electrostatic-controlled transconductance oscillations phenomenon. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures in narrow regimes. It holds promise for developing future integrated electronic devices based on 2D semiconducting nanomaterials with tailored confinement and enhanced functionalities.