材料科学
钙钛矿(结构)
串联
氧化铟锡
单层
硅
能量转换效率
光电子学
异质结
带隙
开路电压
纳米技术
化学工程
电压
薄膜
复合材料
电气工程
工程类
作者
Guo Chang,Hong‐Qiang Du,Yu‐Chen Wang,Xiang Gao,Lan Yao,Yongguang Xiao,Wei Jiang,Yi‐Chen Zhou,Qing Yuan,Ziyue Qiang,Jihong Zheng,Long‐Hui Yang,Caixia Wang,Ning Yang,Rui Lin,Guijie Liang,Mathias Uller Rothmann,Xinhua Ouyang,Yi‐Bing Cheng,Wei Li
标识
DOI:10.1002/adma.202504520
摘要
Abstract Perovskite/silicon tandem solar cells have shown higher power conversion efficiencies (PCEs) than single‐junction cells. However, their record PCE still falls short of the theoretical maximum, and their stability is significantly lower than that of crystalline silicon solar cells. These challenges stem from the substantial losses in open‐circuit voltage ( V OC ) and the instability of wide‐bandgap perovskite devices, which are mainly caused by nonradiative recombination and degradation at the heterojunction interfaces, respectively. Specifically, the weak adhesion between indium tin oxide (ITO) and self‐assembled monolayers (SAMs), along with inadequate interactions between the SAMs and the perovskite, contributes to this instability. Herein, a novel SAM material, 4‐(11H‐benzo[a]carbazol‐11‐yl)butyl (4‐PhCz), has been developed to bifacially reinforce interfaces by enhancing SAM coverage on ITO and strengthening the interactions between SAM and perovskites. The resulting 1.67 eV perovskite solar cell (PSCs) achieves a V OC of 1.273 V with a low voltage loss of 0.397 V relative to the bandgap and a PCE of 22.53%. The 4‐PhCz‐based perovskite/silicon tandem cell achieves a V OC of 1.96 V and a PCE of 31.26%, retaining 92% of its initial efficiency after 1000 h of maximum power point tracking (MPPT) under 1‐sun illumination in a nitrogen atmosphere at 25 °C.
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