蓝宝石
金属有机气相外延
材料科学
X射线光电子能谱
化学气相沉积
分析化学(期刊)
碳纤维
吸收(声学)
氮化硼
外延
图层(电子)
化学
纳米技术
光学
化学工程
激光器
复合数
工程类
物理
复合材料
色谱法
作者
Xin Zhou,ChuanHao Li,Ming Jiang,Tiwei Chen,Wenbo Tang,Yongjian Ma,Kun Xu,Feng Yang,Xiaodong Zhang,Li Zhang,Xinping Zhang,Zhongming Zeng,Baoshun Zhang
出处
期刊:Vacuum
[Elsevier]
日期:2023-07-01
卷期号:213: 112083-112083
被引量:3
标识
DOI:10.1016/j.vacuum.2023.112083
摘要
Large wafer-level hexagonal boron nitride (h-BN) was grown on sapphire by MOCVD in a pulse epitaxy mode. Comprehensive materials characterizations were performed on these samples including Fourier infrared spectroscopy, X-ray diffraction, Transmission Electron Microscope (TEM), and X-ray photoelectron spectroscopy. It is indicated that the BN film is hexagonal crystal phase with sp2 B–N bond and the content of B and N elements is about 1:1. The growth model of the h-BN on sapphire by MOCVD was proposed. A small amount of unintentionally doped carbon element was characterized in the h-BN film through XPS and optical absorption spectrometer analysis. The content of carbon was positively correlated with the flow rate of Triethyl-borane (TEB). The absorption band edge of h-BN doped carbon is about 219 nm and the band gap is 5.65 eV. According to first-principles calculations, C replacing the positions of N atoms in h-BN causes the absorption peak of the impurity level at 295 nm. Meanwhile, two-dimensional interlayer Van der Waals (vdW) characteristics of h-BN were observed, on account of the h-BN self-separation phenomenon that occurred on the sapphire, the upper AlN layer on the h-BN layer could be peeled from the sapphire.
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