抗磁性
顺磁性
兴奋剂
凝聚态物理
材料科学
铁磁性
拓扑绝缘体
掺杂剂
磁场
物理
量子力学
作者
Niladri Sekhar Kander,Suman Guchhait,A. K. Das
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2023-01-20
卷期号:98 (3): 035802-035802
被引量:7
标识
DOI:10.1088/1402-4896/acb513
摘要
Abstract In this article, we have studied the changes in structural, magnetic, and magneto-transport properties of Bi 2 Te 3 topological insulator doped with magnetic (Fe) as well as non-magnetic (In) elements. The un-doped along with Fe, In-doped Bi 2 Te 3 are grown using a melt growth technique. The Rietveld analysis of x-ray diffraction data expresses that both In and Fe-dopants substituted the Bi-position with a little bit of interstitial incorporation in host Bi 2 Te 3 . It is also noticed that In-doping is slightly more favorable for Bi-substitution than Fe. The magnetic characterization reveals a mixing of diamagnetic and Pauli paramagnetic behavior of un-doped and In-doped Bi 2 Te 3 , whereas, Fe-doping shows overall paramagnetism with local anti-ferromagnetic interactions among Fe-ions without long-range order. The electrical-transport study represents the metallic response of host Bi 2 Te 3 , which is well-maintained for In-doping; however, Fe-doping exhibits prominent anomalies in ρ xx –T profiles. Importantly, magneto-conductance research indicates a notable deviation of host quantum feature, weak anti-localization effect (WAL) upon magnetic (Fe) doping, whereas non-magnetic In-doping shows a comparatively weak deviation in WAL effect for high doping limit.
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