晶界
材料科学
微电子
晶界扩散系数
有限元法
晶界强化
集成电路
压力(语言学)
多晶硅
各向异性
硅
复合材料
纳米技术
光电子学
结构工程
光学
薄膜晶体管
图层(电子)
工程类
哲学
物理
微观结构
语言学
作者
Mehar Chand Sharma,Sudhakara Reddy Saripalli,Anuj Gupta,Pankaj Palta,Digvijay Pandey
标识
DOI:10.1142/s0219467825500081
摘要
Visualization of material composition across numerous grains and complicated networks of grain boundaries using image processing techniques can reveal fresh insights into the material’s structural evolution and upcoming functional capabilities for a variety of applications. Three-dimensional integrated circuits (3D IC) are the most practical technology for increasing transistor density in future semiconductor applications. One of the key benefits of 3D IC is heterogeneous integration, which results in shorter interconnections due to vertical stacking. However, one of the most significant challenges in building higher-density microelectronics devices is the stress generated by material mismatches in the coefficient of thermal expansion (CTE). The purpose of this study is to analyze grain boundary migration caused by variations in strain energy density using image processing methods for 3D grain continuum modeling. Temperature changes in polycrystalline structures generate stresses and strain energy densities, which may be calculated using FEM software. Single crystal Cu’s anisotropic elastic properties are twisted to suit grain orientation in space and each grain is treated as a single crystal. Grain boundary speeds are calculated using a simple model that relates grain boundary mobility to variations in strain energy density on both sides of grain boundaries. Using the grain continuum model, researchers will be able to investigate the effect of thermally generated stresses on grain boundary motion caused by atomic flux driven by strain energy. Using finite-element modeling of the grain structure in a Through Silicon Via, the stress effect on grain boundaries caused by grain rotation due to CTE mismatch was investigated (TSV). The structure must be modeled using a scanning electron microscopes Electron Backscatter Diffraction (EBSD) image (SEM). Grain growth and subsequent grain boundary rotation can be performed using the appropriate extrapolation method to measure their influence on stress and, as a result, the TSV’s overall reliability.
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