光探测
材料科学
窄带
法布里-珀罗干涉仪
光电子学
红外线的
金属
吸收(声学)
电荷(物理)
光学
光电探测器
波长
物理
复合材料
量子力学
冶金
作者
Han Wu,Qiang Shao,Mengli Liu,Ze Jin,Zehao Wang,Cheng Shen,Koen Vandewal,Yongqi Bai,Quan Liu,Ziyi Ge
出处
期刊:PubMed
日期:2025-08-14
卷期号:: e09521-e09521
标识
DOI:10.1002/adma.202509521
摘要
Narrowband short-wave infrared (SWIR) organic photodetectors, combining wavelength-specific detection with the inherent advantages of organic semiconductors, are important candidates for many applications like medical diagnostics, industrial sorting, and environmental monitoring. However, previously reported spectral-narrowing strategies often compromise device performance through structural complexity and intrinsic limitations of charge-transfer (CT) absorption, even when coupled with strong cavity device architectures. To address this, a pseudo-charge-transfer state is engineered by doping an ultra-narrow bandgap third component, simultaneously optimizing electrode processing to minimize parasitic absorption and interface energetic barriers. This co-design approach yields spectrally selective photodetectors with an EQE exceeding 40% at zero-bias at 1020 nm, a FWHM of < 60 nm, a detectivity > 3 × 1013 Jones, and an over 140dB dynamic range, while maintaining flexibility. PET-based devices show <5% performance degradation after 3000 bending cycles. This work establishes a general design paradigm for organic narrowband photodetectors that combines laboratory-scale performance with practical manufacturability for wearable and large-area SWIR applications.
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