神经形态工程学
记忆电阻器
材料科学
微电子
钙钛矿(结构)
电阻随机存取存储器
成核
堆栈(抽象数据类型)
纳米技术
光电子学
卤化物
电阻式触摸屏
薄膜
非易失性存储器
工程物理
职位(财务)
数码产品
纳米电子学
电容器
钥匙(锁)
功率消耗
晶体管
超级电容器
电子工程
作者
Swagata Panchanan,Subhajit Dutta,Ghulam Dastgeer,Russlan Jaafreh,Kotiba Hamad,Sang Il Seok
标识
DOI:10.1002/adfm.202520665
摘要
Abstract Synaptic memristors, which mimic the fundamental functional units of the human brain, offer a promising strategy for implementing brain‐inspired (neuromorphic) computing. Among various materials, high‐performance perovskites have emerged as key candidates for artificial neuromorphic devices due to their favorable electronic properties. However, the integration of perovskites into microelectronic systems faces significant challenges, primarily stemming from their intrinsic limitations, including high defect densities, environmental instability, and toxicity. Here, a controlled phase‐modulation approach using low‐dimensional (0D and 1D) copper halide perovskites (CHP) via solvent dripping is presented, which facilitates the formation of highly ordered mixed phases on a single thin film through regulated nucleation kinetics. This strategy effectively reduces interfacial recombination and enhances ion migration. The resulting device exhibits ultralow energy consumption in the picojoule regime, along with an on/off ratio of ≈10 5 , enabling robust logic‐state separation and supporting reliable non‐volatile memory and multilevel data storage functionalities. These findings position lead‐free perovskite memristors not only as sustainable alternatives but also as superior candidates capable of surpassing 2D materials in terms of scalability, power efficiency, and resistive switching reliability.
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