放大器
辐射
参数统计
光参量放大器
功率(物理)
材料科学
光学
光电子学
光放大器
物理
激光器
数学
量子力学
统计
CMOS芯片
作者
Bianka Csanaková,Ondřej Novák,Lukáš Roškot,Jiří Mužík,Martin Smrž,Helena Jelı́nková,Tomáš Mocek
出处
期刊:Laser Physics
[IOP Publishing]
日期:2024-05-22
卷期号:34 (7): 075401-075401
标识
DOI:10.1088/1555-6611/ad45db
摘要
Abstract In this paper, we present a single crystal, KTA (potassium titanyl-arsenate, KTiOAsO 4 ) based picosecond optical parametric amplifier pumped by an in-house built 1030 nm Yb:YAG thin-disk laser, capable of tunability from 1.46 to 3.5 µ m, operating at 90 kHz, with high average power in the signal and idler beams. The highest output power of 8.9 W was reached for the 1750 nm signal beam with 19% conversion efficiency and the respective 2500 nm idler beam power was 6.2 W with 13% efficiency. The highest combined signal and idler mid-infrared power was 17 W at the 2060 nm wavelength degeneracy point.
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