Uncooled Si infrared photodetector for 2 μm wavelength using stimulated emission by dressed photons

Abstract A Si infrared photodetector that operates without requiring to be cooled was fabricated, and its properties were evaluated. The function of this device is to detect, as an electrical signal, carrier density changes due to stimulated emission utilizing a phonon-assisted process via dressed photons. The photosensitivities of this device were 0.21 A W −1 , 0.03 A W −1 , and 0.01 A W −1 for wavelengths of 1.3 μ m, 1.6 μ m, and 2.0 μ m, respectively, when the forward current density was 50 A cm −2 , and the device exhibited a higher sensitivity for wavelengths greater than the cutoff wavelength.