掺杂剂
碲化镉光电
材料科学
载流子密度
光电子学
群（周期表）
兴奋剂
化学
有机化学
作者
Mahisha Amarasinghe,Eric Colegrove,David S. Albin,Santosh K. Swain,Joel N. Duenow,Xin Zheng,Andrew J. Ferguson,Kelvin G. Lynn,Wyatt K. Metzger
标识
DOI：10.1109/pvsc40753.2019.8981177
摘要
CdTe-based photovoltaic device performance can be improved by increasing both hole density and carrier lifetime simultaneously. In this work, we discuss sources and thin film processes to achieve incorporation and high hole density in conjunction with lifetime using group-V dopants.
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