Since the self-rectifying memristor (SRM) can effectively mitigate the sneak path problem, it is favored by researchers for large-scale passive crossbar arrays. We successfully fabricated a prominent Pt/Al2O3/TaOx/Ta bilayer SRM device (~103on/off ratio, ~103rectification ratio, and high-uniformity) with a 100-μm feature size. A ~1 μA self-compliance current and2O3/TaOx/Ta SRM device are analyzed by band diagram. This bilayer structure SRM may provide a promising candidate for 3D integration.