电介质
结晶
材料科学
带隙
高-κ电介质
栅极电介质
泄漏(经济)
分析化学(期刊)
电子工程
光电子学
电气工程
化学
热力学
电压
物理
晶体管
宏观经济学
色谱法
经济
工程类
作者
Wenjuan Zhu,T. Tamagawa,M. Gibson,Toshio Furukawa,T.P. Ma
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2002-11-01
卷期号:23 (11): 649-651
被引量:249
标识
DOI:10.1109/led.2002.805000
摘要
This authors present the effect of Al inclusion in HfO/sub 2/ on the crystallization temperature, leakage current, band gap, dielectric constant, and border traps. It has been found that the crystallization temperature is significantly increased by adding Al into the HfO/sub 2/ film. With an addition of 31.7% Al, the crystallization temperature is about 400-500/spl deg/C higher than that without Al. This additional Al also results an increase of the band gap of the dielectric from 5.8 eV for HfO/sub 2/ without Al to 6.5 eV for HfAlO with 45.5% Al and a reduced dielectric constant from 19.6 for HfO/sub 2/ without Al to 7.4 for Al/sub 2/O/sub 3/ without Hf. Considering the tradeoff among the crystallization temperature, band gap, and dielectric constant, we have concluded that the optimum Al concentration is about 30% for conventional self-aligned CMOS gate processing technology.
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