可靠性(半导体)
电流(流体)
温度控制
控制理论(社会学)
功率(物理)
安全操作区
热传导
常量(计算机编程)
材料科学
温度测量
结温
MOSFET
变量(数学)
热的
功率半导体器件
电气工程
计算机科学
电压
控制(管理)
工程类
数学
晶体管
物理
热力学
机械工程
复合材料
人工智能
数学分析
程序设计语言
作者
Mahera Musallam,P.P. Acarnley,C. Mark Johnson,L.S. Pritchard,Volker Pickert
标识
DOI:10.1049/iet-cds:20060066
摘要
Frequent variations in device power loss cause corresponding changes in operating temperature, which may adversely affect device reliability. A method for reducing the device temperature variations is introduced. A simplified third-order thermal model of the device is evaluated in real-time to estimate the instantaneous device temperature. The estimated temperature is used in a temperature control loop to reduce temperature variations by adjusting the device switching frequency. In this way, changes in device conduction loss are counteracted by varying the switching losses, so that the overall losses are substantially constant. The principle is applied to a MOSFET switching a dc load current at random intervals.
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