石墨烯
肖特基二极管
半导体
材料科学
肖特基势垒
热离子发射
光电子学
整改
范德瓦尔斯力
纳米技术
二极管
凝聚态物理
电压
物理
量子力学
分子
电子
作者
Sefaattin Tongay,Maxime G. Lemaitre,Xiaochang Miao,Brent P. Gila,Bill R. Appleton,Arthur F. Hebard
标识
DOI:10.1103/physrevx.2.011002
摘要
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities.
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