记忆电阻器
材料科学
纳米技术
突触
灵活性(工程)
基质(水族馆)
图层(电子)
光电子学
生物电子学
电子工程
生物传感器
统计
海洋学
数学
神经科学
生物
地质学
工程类
作者
Ya Lin,Tao Zeng,Haiyang Xu,Zhongqiang Wang,Xiaoning Zhao,Weizhen Liu,Jiangang Ma,Yichun Liu
标识
DOI:10.1002/aelm.201870056
摘要
Using a nondestructive water-dissolution method, Haiyang Xu, Zhongqiang Wang, and co-workers demonstrate a transferable WOx-based memristor with a NaCl substrate as the sacrificial layer in article number 1800373. The synaptic devices are transferred onto diverse substrates, presenting excellent flexibility and high mechanical endurance. The essential functions of synaptic plasticity are obtained by the device in the bent state. The work presents a feasible method that enables inorganic memristors for transferable applications.
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