量子点
材料科学
光电子学
发光二极管
亮度
量子效率
图层(电子)
芯(光纤)
量子
二极管
光学
纳米技术
物理
量子力学
复合材料
作者
Jiaojiao Song,Wei Ouyang,Huaibin Shen,Qingli Lin,Zhaohan Li,Lei Wang,Xintong Zhang,Lin Song Li
标识
DOI:10.1002/adfm.201970226
摘要
In article number 1808377, Huaibin Shen, Lin Song Li, and co-workers fabricate light-emitting diodes with an external quantum efficiency >30% by exploiting Zn1−xCdxSe core/shell quantum dots with ZnSe as the intermediate layer and ultrathin ZnS. The maximum brightness achieved is up to 334 000 cd m−2, and the operational lifetime is extended to ≈1 800 000 h at 100 cd m−2.
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