Tailored Transport and Logic Capability of 2D Group IV-VI Semiconductor-Based Multibridge Channel FETs

Multibridge channel field-effect transistors (MBC-FETs) based on two-dimensional (2D) semiconductors emerge as promising candidates for achieving the ultimate scaling of transistors at advanced technology nodes. Here, the MBC-FETs based on 2D group IV-VI materials are designed by vertically stacking multiple conductive channels and gate electrodes. Concurrently, the operational mechanism underlying the device's tailored transport behaviors is comprehensively analyzed by integrating the characterizations of potential difference, local device density of states, transmission spectra, and projected device density of states. The double-gate double-channel MBC-FETs with 96.2 mV/dec subthreshold swing (SS) achieve YES, NAND, and NOR logic operations via precise electrode doping concentration control and programmable bias voltage. Moreover, the triple-gate double-channel MBC-FETs (SS = 81 mV/dec) enable the implementation of Y = A̅, NAND, and Y = B̅ logic operations. This work paves the way for developing MBC-FETs-based multifunctional logic devices for next-generation integrated circuits and continuing Moore's Law.