带隙
兴奋剂
掺杂剂
密度泛函理论
电子结构
费米能级
材料科学
态密度
原子轨道
混合功能
电子能带结构
凝聚态物理
纳米技术
化学物理
电子
光电子学
计算化学
化学
物理
量子力学
作者
Sakshi Sharma,A. K. Shrivastav,Anjali Oudhia,Mohan L. Verma
出处
期刊:IOP conference series
[IOP Publishing]
日期:2021-03-01
卷期号:1120 (1): 012014-012014
被引量:1
标识
DOI:10.1088/1757-899x/1120/1/012014
摘要
Abstract The nanostructured ZnO Buckyball (ZnOBB) and Al-doped ZnO Buckyball (ZnOBB: Al) has been optimized and their electronic properties were studied using the first-principle density functional theory (DFT) approach. The study includes the structural and electronic analysis of the system, done by observing the variation in the bond length, cell volume, Density of States (DOS) and Partial Density of States (PDOS). The DOS analysis provides information about Fermi level and bandgap while its further study with PDOS furnished an understanding of the orbitals which are contributing to the overall transition of electrons in the material. The optimized structure of ZnOBB: Al consists of dopant Al placed in the position of one of the Zn atoms in the cage of ZnOBB. Undoped ZnOBB showed a bandgap value ~1.5 eV, while ZnOBB: Al showed an increased bandgap value ~3.25 eV, which is attributed to the reduction in the size of ZnOBB after doping. This work proposes a doping mechanism, which may further explain the modifications of the bandgap. ZnOBB structure is itself a very contemporary topic of research and such kind of alteration in the bandgap with doping increases its applications in optoelectronic devices.
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