SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

This paper presents the SPICE modeling and circuit development of a SiC power integrated circuit (IC) technology that offers monolithic integration of high-voltage lateral n-type SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) and low-voltage SiC complementary-MOS (CMOS) devices. The SPICE models are based on two-dimensional device simulations with the Sentaurus TCAD device simulator. With the developed SPICE models, this technology enables the design of application specific integrated circuits (ASICs) in SiC, such as fully integrated high-voltage SiC power converters, that can work in high temperature and radioactive environments. Circuit simulations of a SiC CMOS inverter and a SiC ring oscillator are included to demonstrate the technology.