铁电性
量子隧道
隧道枢纽
材料科学
隧道磁电阻
物理
凝聚态物理
光电子学
铁磁性
电介质
作者
Eunyeong Yang,Kyung Rok Kim,Jiwon Chang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2021-10-01
卷期号:42 (10): 1472-1475
被引量:5
标识
DOI:10.1109/led.2021.3103518
摘要
Ferroelectric tunnel junction (FTJ) exploiting the switchable polarization of ferroelectric material holds great potential for the low-power non-volatile memory. Recently, two-dimensional (2D) ferroelectric material CuInP 2 S 6 (CIPS) which can provide ferroelectricity at the ultimate atomic-scale has been successfully introduced in FTJ to achieve significantly improved TER. Here, we present a theoretical study on the performance of FTJ based on CIPS through the quantum transport simulation using kp Hamiltonian obtained from density functional theory. Benchmarking with ferroelectric HfZrO 2 -based FTJ reveals that much higher TER can be achieved in CIPS-based FTJ due to a lower tunneling potential barrier and a larger tunneling effective mass.
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