Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs

For the first time, this work reports Safe Operating Area (SOA) assessment and degradation physics in Polarization Super Junction (PSJ) based GaN FETs made on Silicon and sapphire substrates under high voltage and high current injection conditions. Impact of device design parameters on SOA, associated trap assisted device degradation, and thermal failure are studied. Correlation between polarization super junction length and failure threshold is discovered, beside power and field dependence of SOA boundary.